Method for manufacturing optical image stabilizer employing scratch drive actuator

ABSTRACT

A method for an optical image stabilizer including: providing an SOI wafer substrate which has a plurality of cells, the SOI wafer substrate including an insulating layer, and first and second silicon layers disposed on both sides of the insulating layer; forming scratch drive arrays and supporting members on each of the cells by etching the first silicon layer; forming the table through cells&#39; separation by etching the second silicon layer and the insulating layer; removing the insulating layer interposed between the scratch drive arrays and the table; mounting the image sensor on the table; forming the substrate which has an electrode layer corresponding to the scratch drive arrays; and assembling the table with the image sensor and the scratch drive arrays on the substrate having the electrode layer in such a manner that the scratch drive arrays face the electrode layer each other.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a U.S. divisional application filed under 37 CFR1.53(b) claiming priority benefit of U.S. Ser. No. 12/926,371 filed inthe United States on Nov. 12, 2010, which claims earlier prioritybenefit to Korean Patent Application No. 10-2010-0068568 filed with theKorean Intellectual Property Office on Jul. 15, 2010, the disclosures ofwhich are incorporated herein by reference.

BACKGROUND

1. Field

The present invention relates to an optical image stabilizer and amethod for manufacturing the same; and, more particularly, to an opticalimage stabilizer for driving an image sensor and a method formanufacturing the same.

2. Description of the Related Art

In general, a recent mobile communication terminal tends to be equippedwith a camera device. In particular, such mobile communication terminalsare frequently used when users on move photograph desired images.Therefore, in order to obtain a high-quality image, mobile communicationterminals have been required to include an image stabilizer forcorrecting an image blurred due to hand's shake.

In particular, as a camera device is provided with an image stabilizer,it is possible to obtain a clear image even in environments (e.g. indark room or at nighttime) where shutter's speed is low owing to light'slack.

An Optical Image Stabilizer (OIS) of various image stabilizers providesa correction function to prevent an image on an image sensor from beingshaken by a change in a location of an optical lens or an image sensor,even if trembling occurs at photographing.

Herein, as an image stabilizer for moving an optical lens requires anenough space to accommodate a drive unit for driving the optical lens,the image stabilizer has a limitation to be incorporated into a mobilecommunication terminal with an insufficient space. On the other hand, animage stabilizer for moving an image sensor requires a relativelysmaller mounting-space over the image stabilizer for moving the opticallens.

Thus, in order to be applicable to a mobile communication terminal,various technologies have been developed to implement an imagestabilizer which can move an image sensor. However, there still existmany difficulties to satisfy limited drive displacement and restrictedspace of an image sensor.

SUMMARY

The present invention has been proposed in order to overcome theabove-described problems and it is, therefore, an object of the presentinvention to provide an optical image stabilizer for correcting imagesblurred due to hand-shake by driving an image sensor, and a method formanufacturing the same.

In accordance with one aspect of the present invention to achieve theobject, there is provided an optical image stabilizer including: asubstrate; a table which faces the substrate and has an image sensormounted on its upper surface to be horizontally actuated on thesubstrate; supporting members for supporting the table on the substrate;and a scratch drive actuator for actuating the table.

Also, the scratch drive actuator includes: an electrode layer which isdisposed on the substrate and generates electrostatic force; and scratchdrive arrays which are disposed on the electrode layer and movable inpredetermined directions by the electrostatic force.

Also, the scratch drive arrays includes: a plurality of scratch driveunits which are spaced apart from the substrate, the scratch drive unitseach including a plate part parallel to the substrate and a bushing partbent at one side surface of the plate part; and a beam part forinterconnecting the scratch drive units to one another.

Also, the scratch drive arrays are disposed between the substrate andthe table.

Also, the electrode layer includes an electrode pattern patterned tocorrespond to each of the scratch drive arrays.

Also, the scratch drive arrays are movable in mutually differentdirections from one another.

Also, the supporting members and the beam parts are formed in a body.

Also, the electrode layer is formed of a conductor made of metal or polysilicon.

Also, the scratch drive arrays are formed of silicon.

Also, the optical image stabilizer further comprises an insulatingpattern interposed between the supporting members and the table.

Also, the table is formed of silicon.

Also, the image sensor is mounted by a wire bonding scheme or aflip-chip bonding scheme.

In accordance with another aspect of the present invention to achievethe object, there is provided a method for an optical image stabilizerincluding the steps of: providing an SOI wafer substrate which has aplurality of cells, the SOI wafer substrate including an insulatinglayer, and first and second silicon layers disposed on both sides of theinsulating layer; forming scratch drive arrays and supporting members oneach of the cells by etching the first silicon layer; forming the tablethrough cells' separation by etching the second silicon layer and theinsulating layer; removing the insulating layer interposed between thescratch drive arrays and the table; mounting the image sensor on thetable; forming the substrate which has an electrode layer correspondingto the scratch drive arrays; and assembling the table with the imagesensor and the scratch drive arrays on the substrate having theelectrode layer in such a manner that the scratch drive arrays face theelectrode layer each other.

Also, the step of forming the scratch drive arrays includes the stepsof: forming a first resist pattern on the first silicon layer of the SOIwafer substrate; forming a bushing part and a beam part connected to thebushing part by etching the first silicon layer through use of the firstresist pattern as an etching mask; forming a second resist pattern onthe first silicon layer on which the bushing part and the beam part areformed; and forming a plate part by etching the first silicon layerthrough use of the second resist pattern as an etching mask.

Also, in the step of forming the bushing part and the beam part, thesupporting members are further formed.

Also, the scratch drive arrays are formed in plural numbers.

Also, the step of forming the substrate having the electrode layercorresponding to the scratch drive arrays includes a step of forming anelectrode pattern to correspond to each of the scratch drive arrays.

Also, the method further includes a step of forming a protective filmfor each cell including the scratch drive arrays, before the step offorming the table through cells' separation by etching the secondsilicon layer and the insulating layer.

Also, the step of forming the substrate including the electrode layercorresponding to the scratch drive arrays includes the steps of: formingan insulating layer on the substrate; forming a poly silicon layer onthe insulating layer; and forming an electrode layer by etching the polysilicon layer.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other aspects and advantages of the present generalinventive concept will become apparent and more readily appreciated fromthe following description of the embodiments, taken in conjunction withthe accompanying drawings of which:

FIG. 1 is a perspective view showing an optical image stabilizer inaccordance with a first embodiment of the present invention;

FIG. 2 is a cross-sectional view showing the optical image stabilizer ofFIG. 1;

FIG. 3 is a schematic view showing the arrangement of scratch drivearrays of FIG. 1;

FIG. 4 is a schematic view for explaining how a scratch drive actuatoris driven;

FIG. 5 is a view showing an example where scratch drive units arearranged;

FIGS. 6 to 17 are cross-sectional views showing a process ofmanufacturing an optical image stabilizer in accordance with a secondembodiment of the present invention, respectively; and

FIGS. 18 to 21 are perspective views showing a process of manufacturingthe optical image stabilizer in accordance with the second embodiment ofthe present invention, respectively.

DESCRIPTION OF EMBODIMENTS

Embodiments of an optical image stabilizer in accordance with thepresent invention will be described in detail with reference to theaccompanying drawings. When describing them with reference to thedrawings, the same or corresponding component is represented by the samereference numeral and repeated description thereof will be omitted.

FIG. 1 is a perspective view showing an optical image stabilizer inaccordance with a first embodiment of the present invention.

FIG. 2 is a cross-sectional view showing the optical image stabilizer ofFIG. 1.

Referring to FIGS. 1 and 2, the optical image stabilizer 100 inaccordance with the embodiment of the present invention may be formed tobe in a Micro Electro Mechanical System (MEMS) structure so as toimplement miniaturization. At this time, the optical image stabilizer100 may correct images blurred due to hand's shake by changing thelocation of an image sensor.

In particular, the optical image stabilizer 100 may include a substrate110, a table 120, supporting members 150, and a scratch drive actuator140.

Since the substrate 110 is made from a Silicon On Insulator (SOI) wafer,it may be made of silicon.

The table 120 may be disposed to face the substrate 110. Herein, thetable 120 may be actuated on the substrate 110 by being lifted. At thistime, an image sensor 130 may be mounted on the top of the table 120.Thus, due to actuation of the table 120, the image sensor 130 may beactuated on the substrate 110 as well.

Herein, the image sensor 130 may be mounted by a wire bonding scheme.However, the embodiment of the present invention is not limited thereto,and may also be mounted by a flip-chip bonding scheme.

Also, the image sensor 130 refers to an element for converting imageinformation into electrical signals. Although it may be formed in one ofCCD and CMOS types, the embodiment of the present invention is notlimited thereto. At this time, in order to less affect actuation of thetable 120, the image sensor 130 may be electrically connected to asignal processing unit (not shown) through a Flexible Printed CircuitBoard (FPCB) 110 rather than a rigid PCB.

Since the table 120 may be formed through the MEMS technology employingan SOI wafer, the table 120 may be formed of silicon.

The supporting members 150 may play a role of supporting the table 120on the substrate 110. Herein, as the supporting members 150 may beformed through the MEMS technology employing the SOI wafer, it may bemade of silicon. At this time, an insulating pattern 160 has beeninterposed between the supporting members 150 and the table 120. As theinsulating pattern 160 allows the supporting members 150 and the table120 to be in contact with each other, the supporting members 150 maysupport the table 120.

Electrostatic force may be used to fixedly mount the table 120 on thesubstrate 110. That is, by constantly applying a predetermined voltageto either the substrate 110 or the table 120, there may be producedelectrostatic force caused by a voltage difference between the substrate110 and the table 120. Since the electrostatic force makes the table 120attracted to the substrate 110, the table 120 may be fixed on thesubstrate 110.

The scratch drive actuator 140 may be a driving device for actuating thetable 120 by using the electrostatic force. Herein, the scratch driveactuator 140 may include scratch drive arrays 140 a and an electrodelayer 140 b disposed on the substrate 110.

The electrode layer 140 b may be formed of a conductor. At this time, asfor the conductor, poly silicon or metal may be exemplified.

Herein, the electrode layer 140 b may have been patterned to make thetable 120 movable in a specific direction.

In addition to this, an insulating layer 111 may further be interposedbetween the substrate 110 and the electrode layer 140 b. At this time,the insulating layer 111 may play a role of a buffer for formation ofthe electrode layer 140 b. As for material of the insulating layer 111,SiO2 or Si3N4 may be exemplified.

Since the scratch drive arrays 140 a may be formed through the MEMStechnology employing the SOI wafer, the scratch drive arrays 140 a maybe made of silicon.

Hereinafter, a detailed description will be given of scratch drivearrays, with reference to FIG. 3.

FIG. 3 is an expanded view showing a part of the scratch drive arraysshown in FIG. 1.

Referring to FIG. 3, the scratch drive arrays 140 a each may include aplurality of scratch drive units 141, and a beam part 142 forinterconnecting the scratch drive units 141.

The scratch drive units 141 each may include a plate part 141 a spacedapart from the substrate 110, and a bushing part 141 b bent at one sidesurface of the plate part 141 a. Herein, the plate part 141 a may bespaced apart from the substrate 110 in a parallel relation with respectto the substrate 110. Also, the plate part 141 a may have been spacedapart from the table 120. The bushing part 141 b may be bent toward theelectrode layer 140 b. At this time, a lower end of the bushing part 141b may be adhered closely to the electrode layer 140 b. Thus, the scratchdrive units 141 may be interposed between the table 120 and thesubstrate 110.

The beam part 142 is connected to the bushing part 141 b to therebyinterconnect the scratch drive units 141 among themselves. Herein, thebeam part 142 may be integrated with the bushing part 141 b. Also, thebeam part 142 may be connected to the supporting members 150. Herein,the beam part 142 and the supporting members 150 may be formed in abody. Thus, the beam part 142 may be connected to the scratch driveunits 141 together with the supporting members 150 at a lower portion ofthe table 120.

Hereinafter, a driving principle of the scratch drive actuator will bedescribed with reference to FIG. 4.

FIG. 4 is a schematic view for explaining how the scratch drive actuatoris driven.

Referring to FIG. 4, at an initial stage where no voltage is applied tothe electrode layer 140 b, the plate part 141 a is spaced apart from theelectrode layer 140 b, as shown in (a) of FIG. 4. In case where thevoltages of square waveforms are applied to the electrode layer, theelectrostatic force makes the electrode layer 140 b pulled downward. Atthis time, one side of the plate part 141 a is immovable by beingsupported by the bushing part 141 b, and thus the non-connected otherside of the plate part 141 a to the bushing part 141 b is mainlydeformed while being in contact with surfaces of the electrode layer 140b, as shown in (b) of FIG. 4. In case where a voltage applied to theelectrode layer 140 b returns to zero, the plate part 141 a being incontact with the electrode layer 140 b tends to be returned to itsoriginal position by elastic restoring force, as shown in (c) of FIG. 4.In case where a negative voltage is applied again and thus there isproduced a potential difference between the electrode layer 140 b andthe scratch drive units 141, the scratch drive units 141 are movedforward by Δ_(X) in a formation direction of the bushing part 141 bsince friction force between the bushing part 141 b and the electrodelayer 140 b is even smaller than that between the plate part 141 a andthe electrode layer 140 b, as shown in (d) of FIG. 4. In case where avoltage applied to the electrode layer 140 b entirely returns to zero,the scratch drive units 141 are restored in its original shape and arefinally moved forward by Δ_(X), as shown in (e) of FIG. 4.

Thus, the scratch drive units 141 may be moved by using theelectrostatic force generated by the voltage applied to the electrodelayer 140 b.

Returning to FIGS. 1 to 3, as the scratch drive units 141 in the scratchdrive arrays 140 a are moved, the supporting members 150 connected tothe beam part 142 of the scratch drive arrays 140 a are influenced aswell, and thus the table 120 supported by the supporting members 150 maybe naturally movable.

Herein, a movement direction of the table 120 may be decided by adirection where the scratch drive units 141 are moved, that is, adirection where the bushing part 141 b is formed in the scratch driveunits 141. At this time, the movement direction of the table 120 maycoincide with a direction where the scratch drive units are moved, thatis, a direction where the bushing part 141 b is formed in the scratchdrive units 141.

Thus, the movement direction of the table 120 may be controlledaccording to the arrangement method and the driving of the scratch driveunits 141 provided in the scratch drive array 140 a.

Hereinafter, a detailed description will be given of a control methodfor the movement direction of the table with reference to FIG. 5.

FIG. 5 is a plan view showing an example where the scratch drive arraysare arranged.

Referring to FIG. 5, the scratch drive arrays A, B, C, and D areprovided below the table (indicated by reference numeral 120 of FIG. 1).Herein, the scratch drive arrays A, B, C, and D are arranged separatelyfrom one another. At this time, each of the scratch drive arrays A, B,C, and D may include a plurality of scratch drive units (indicated byreference numeral 141 of FIG. 3) which are arranged in the samedirection as one another. At this time, the scratch drive units 141provided in each of the scratch drive arrays A, B, C, and D may bearranged in mutually different directions from one another. Thus, thescratch drive arrays A, B, C, and D may be moved in mutually differentdirections from one another, for example, first, second, third, andfourth directions.

Also, in order to individually drive the scratch drive arrays A, B, C,and D, the electrode layer 140 b may be provided with an electrodepattern patterned to correspond to each of the scratch drive arrays A,B, C, and D.

Thus, it is possible to control the movement direction of the table 120by forming the scratch drive arrays A, B, C, and D to be movable indifferent directions from one another and individually driving theformed scratch drive arrays.

Thus, as in the embodiment of the present invention, the optical imagestabilizer may be provided with the scratch drive actuator which cangenerate a force in itself to move the image sensor by the drivingprinciple employing an attraction force, so that the optical imagestabilizer may have a simple construction.

Also, the optical image stabilizer of the present invention may bemanufactured by the MEMS technology, so that it is possible to reduce amounting space of a camera device at a micrometer size. In addition, itis possible to implement mass-production and thus to lower module'scost.

Hereinafter, a process of manufacturing the optical image stabilizeraccording to the present invention will be described in more detail withreference to FIGS. 6 to 21.

FIGS. 6 to 17 are cross-sectional views showing a process ofmanufacturing an optical image stabilizer in accordance with a secondembodiment of the present invention, respectively.

FIGS. 18 to 21 are perspective views showing a process of manufacturingan optical image stabilizer in accordance with a second embodiment ofthe present invention, respectively. Herein, there is shown only a partof the scratch drive arrays of the optical image stabilizer, forconvenience of description.

Referring to FIGS. 6 to 18, in order to manufacture the optical imagestabilizer in accordance with the second embodiment of the presentinvention, a SOI wafer substrate W is first provided. The SOI wafersubstrate W may be provided with first and second silicon layers W1 andW2 stacked one above another with respect to an insulating layer W2interposed therebetween.

Herein, as for material of the insulating layer W2, a silicon oxide filmor a silicon nitride film may be exemplified. However, the embodiment ofthe present invention is not limited thereto.

Also, the SOI wafer substrate W may be sectioned into a plurality ofcells C. At this time, each of the cells C may be a region where oneoptical image stabilizer is formed.

Referring to FIG. 7, after the SOI wafer substrate W is provided, afirst resist pattern 210 is formed on the second silicon layer W2.Herein, the first resist pattern 210 may be made by forming a resistlayer resulting from dry-film attachment or photosensitive-compositioncoating on the second silicon layer W2, and then performing exposure anddevelop processes for the resist layer. Thereafter, the second siliconlayer W2 is etched to have a step by using the first resist pattern 210as an etching mask, so that it is possible to form the bushing part 141b and the beam part 142. At this time, the bushing part 141 b may beintegrated with the beam part 142.

In the step of forming the bushing part 141 b and the beam part 142, thesupporting members 150 for supporting the table may be formed as well.

Herein, the bushing part 141 b, the beam part 142, and the supportingmembers 150 may be interconnected to one another. At this time, thebushing part 141 b, the beam part 142, and the supporting members 150may be formed in a body.

By removing the first resist pattern 210, as in FIGS. 8 and 19, thebushing part 141 b, the beam part 142, and the supporting members 150may be exposed to the outside.

Referring to FIG. 9, the second resist pattern 220 may be formed on theplate part 141 a of the second silicon layer W2 with the bushing part141 b, the beam part 142, and the supporting members 150. Herein, thesecond resist pattern 220 may be additionally formed on the bushing part141 b, the beam part 142, and the supporting members 150, so that thesecond resist pattern 220 may be protected from an etching process usedfor formation of the plate part 141 a.

In order to form the second resist pattern 220, a resist layer is formedby either attaching a dry film or coating a photosensitive compositionon the second silicon layer W2 with the bushing part 141 b, the beampart 142, and the supporting members 150. Thereafter, the exposure anddeveloping processes are performed for the resultant resist layer tothereby form the second resist pattern 220.

After being formed, the second resist pattern 220 is used as an etchingmask for etching the second silicon layer W2 to thereby the plate part141 a.

By removing the second resist pattern 220, as in FIGS. 10 and 20, theplate part 141 a may be exposed to the outside.

Thus, the scratch drive arrays 140 a including a plurality of thescratch drive units 141 comprised of the bushing part 141 b and theplate part 141 a may be formed for each cell. At this time, a pluralityof scratch drive units 141 may be interconnected to one another by thebeam part 142.

Although it is assumed in the embodiment of the present invention that aformation position of the bushing part 141 b in the scratch drive units141 is formed in the same direction as one another, the presentinvention is not limited thereto. For example, the scratch drive arrays140 a may include a plurality of scratch drive units grouped accordingto a formation direction of the bushing part. That is, the scratch drivearrays 140 a may be formed in plural numbers.

Referring to FIG. 11, a protective film 230 is formed on the firstsilicon layer W1 including the scratch drive arrays 140 a. Herein, theprotective film 230 may play a role of protecting the scratch drivearrays in a dicing process for cell division.

The protective film 230 may be formed of material with durability andchemical resistance, for example, silicon oxide film or silicon nitridefilm.

As for a formation method of the protective film 230, plasma chemicalvapor deposition may be exemplified.

The material and formation method of the protective film are not limitedby the embodiment of the present invention.

Referring to FIG. 12, after the protective film 230 is formed, theprotective film 230 and the insulating layer W2 are etched for each ofthe cells. Thereafter, as in FIG. 13, a part of the first silicon layerW1 is further etched for each of the cells C to thereby from a dicingline 240.

Referring to FIG. 14, after the dicing line 240 is formed, the dicingprocess is performed along the dicing line 240 to thereby separatecells. At this time, the first silicon layer W1 is separated for each ofthe cells to thereby form the table 120.

After the cells C are divided into several pieces, as in FIGS. 15 and21, the protective film 230 is removed. Herein, in case where theprotective film 230 is formed of a silicon oxide film, the protectivefilm 230 may be removed by being immersed in a Buffered HF solution.

Thereafter, there is removed the insulating layer W2 interposed betweenthe scratch drive units 141 and the table 120. Thus, the scratch driveunits 141 may be spaced apart from the table 120. At this time, theinsulating layer W2 disposed on the lower portion of the beam part 142may be removed as well, and thus the beam part 142 may be spaced apartfrom the table 120.

Although not shown in the drawings, the supporting members 150 may beprotected by the protective member in the step of removing theinsulating layer W2. Herein, as for material of the protective member,photo-sensitive resin may be exemplified. Thus, some of the insulatinglayer W2 comes to remain on the lower portion of the supporting members150, and thus the insulating pattern 160 may be naturally formed. Atthis time, the supporting members 150 may be connected to the table 120by means of the insulating pattern 160 disposed on its lower portion.Herein, since a plurality of scratch drive units 141 may be connectedamong themselves by means of the beam part 142 and the supportingmembers 150, the scratch drive units 141 may be connected to the lowerportion of the table 120.

Referring to FIG. 16, the image sensor 130 is mounted on the table 120.Herein, the image sensor 130 may be mounted on the table 120 by a wirebonding scheme, but the present invention is not limited thereto. Forexample, the image sensor 130 may also be mounted by a flip-chip bondingscheme. Thereafter, the image sensor 130 and an external signalprocessing unit may be electrically interconnected to each other throughthe FPCB (indicated by reference numeral 170 of FIG. 1).

Referring to FIG. 17, meanwhile, the electrode layer 140 b is formed onthe substrate 110, the electrode layer 140 b being used to generateelectrostatic force required for driving of the scratch drive array 140a.

In order to form the electrode layer 140 b, the insulating layer 111 isformed on the substrate 110. Herein, the insulating layer 111 may be asilicon oxide film. At this time, the insulating layer 111 may be formedby a plasma chemical vapor deposition, but the present invention is notlimited thereto.

Thereafter, the electrode layer 140 b is formed on the insulating layer111. Herein, the formation of the electrode layer 140 b may be made byforming a poly silicon layer on the insulating layer 111 through aLow-Pressure Chemical Vapor Deposition (LPCVD), and then etching theformed poly silicon layer. Herein, in case where the scratch drive array140 a are formed in plural numbers such that they are movable inmutually different directions, the electrode layer 140 b may have beenpatterned to correspond to each of the scratch drive arrays 140 a.

The electrode layer 140 b and the scratch drive arrays 140 a aredisposed to face each other and the table 120 with the image sensor 130and the scratch drive arrays 140 a is mounted on the substrate 110provided with the electrode 140 b. Herein, the table 120 may besupported on the substrate by the supporting members 150. Also, thetable 120 and the substrate 110 may be fixed by the electrostatic force.

Thus, as in the embodiment of the present invention, the optical imagestabilizer may be manufactured by the MEMS technology, so that it ispossible to reduce a mounting space of a camera device at a micrometersize, as well as to lower module's cots due to mass-production.

The optical image stabilizer of the present invention can generate aforce in itself to move the image sensor by using the driving principleresulting from an attraction force, so that it is possible to implementa simple construction.

Further, the optical image stabilizer of the present invention can bemanufactured by the MEMS technology, so that it is possible to reduce amounting space of a camera device at a micrometer size, as well as tolower module's cots due to mass-production.

As described above, although the preferable embodiments of the presentinvention have been shown and described, it will be appreciated by thoseskilled in the art that substitutions, modifications and variations maybe made in these embodiments without departing from the principles andspirit of the general inventive concept, the scope of which is definedin the appended claims and their equivalents.

What is claimed is:
 1. A method for an optical image stabilizercomprising: providing an SOI wafer substrate which has a plurality ofcells, the SOI wafer substrate including an insulating layer, and firstand second silicon layers disposed on both sides of the insulatinglayer; forming scratch drive arrays and supporting members on each ofthe cells by etching the first silicon layer; forming a table throughcells' separation by etching the second silicon layer and the insulatinglayer; removing the insulating layer interposed between the scratchdrive arrays and the table; mounting an image sensor on the table;providing a substrate having an electrode layer corresponding to thescratch drive arrays; and assembling the table with the image sensor andthe scratch drive arrays on the substrate having the electrode layer insuch a manner that the scratch drive arrays face the electrode layer. 2.The method of claim 1, wherein forming the scratch drive arrayscomprises: forming a first resist pattern on the first silicon layer ofthe SOI wafer substrate; forming a bushing part and a beam partconnected to the bushing part by etching the first silicon layer throughuse of the first resist pattern as an etching mask; forming a secondresist pattern on the first silicon layer on which the bushing part andthe beam part are formed; and forming a plate part by etching the firstsilicon layer through use of the second resist pattern as an etchingmask.
 3. The method of claim 2, wherein, in forming the bushing part andthe beam part, the supporting members are further formed.
 4. The methodof claim 2, wherein the scratch drive arrays are formed in pluralnumbers.
 5. The method of claim 4, wherein forming the substrate havingthe electrode layer corresponding to the scratch drive arrays comprisesforming an electrode pattern to correspond to each of the scratch drivearrays.
 6. The method of claim 1, further comprising forming aprotective film for each cell including the scratch drive arrays, beforeforming the table through cell's separation by etching the secondsilicon layer and the insulating layer.
 7. The method of claim 1,wherein forming the substrate including the electrode layercorresponding to the scratch drive arrays comprises: forming aninsulating layer on the substrate; forming a poly silicon layer on theinsulating layer; and forming an electrode layer by etching the polysilicon layer.